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简述了金刚石兼具物理的和化学的优良性质,尤其是金刚石的半导体电气性质,即宽带隙、高击穿电场、高载流子迁移率和高热导率,成为固态功率器件最有前途的半导体材料之一。介绍了金刚石基的电子器件及其材料生长的研究进展,分析了金刚石膜的导电机理以及材料生长的新技术。重点介绍了采用包括微波等离子体化学汽相淀积(MPCVD)等方法制备金刚石膜、本征单晶生长、硼掺杂等技术。目前在直径为100~200 mm的硅衬底上,可以淀积均匀的超纳米结晶金刚石(UNCD)膜。此外,对金刚石电子学和光电子学的未来进行了展望。
The physical and chemical properties of diamond are briefly described, especially the semiconducting electrical properties of diamond, namely, wide bandgap, high breakdown electric field, high carrier mobility and high thermal conductivity, making it the most promising solid-state power device One of the semiconductor materials. The research progress of diamond-based electronic devices and their material growth is introduced. The conductive mechanism of diamond films and the new technology of material growth are analyzed. The preparation of diamond films, intrinsic single crystal growth and boron doping by microwave plasma chemical vapor deposition (MPCVD) are mainly introduced. Currently, a uniform ultra-nanocrystalline diamond (UNCD) film can be deposited on a silicon substrate with a diameter of 100-200 mm. In addition, the future of diamond electronics and optoelectronics is prospected.