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5. Comparison of GexSi1—x Grown by UHV／CVD from Si2H6／GeH4 and SiH4／GeH4

Comparison of GexSi1—x Grown by UHV／CVD from Si2H6／GeH4 and SiH4／GeH4

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：yjq360124

【摘 要】

：

Using double crystal X-rays diffraction(DCXRD)and atomic force microscopy(AFM),the results of GexSi1-x grown UHV/CVD from Si2H6 and SiH4 are analyzed and compa

【作 者】

：

LIDai－zong YUZhuo 等 

【机 构】

：

StateKeyLaboratoryofIntegratedOptoelectronics

【出 处】

：

半导体光子学与技术：英文版

【发表日期】

：

1999年3期

【关键词】

：

硅化锗 半导体材料 化学气相沉积 Semiconductor Materials GeSi  UHV/CVDCLC number:TN304.054Docume 

【基金项目】

：

TheNationalNaturalScienceFoundation ofChina

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Using double crystal X-rays diffraction(DCXRD)and atomic force microscopy(AFM),the results of GexSi1-x grown UHV/CVD from Si2H6 and SiH4 are analyzed and compared.Adsorbates can migrate to the energy-favoring position due to the slow growth rate from SiH

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