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常规的扩散和离子注入加热退火形成P—N结的方法,都涉及到长时间的高温处理,这会导致半导体材料的少数载流子寿命降低,产生二次诱生缺陷,对器件参数造成不良影响。在持续的高温处理过程中同时发生横向扩散及杂质再分布,这将使器件尺寸小型化、高集成度、高速应用受到限制。离子注入后施行束退火技术,较好地解决了这个问题。人们发现:在半导体材料表面沉积或涂敷一种掺杂剂,通过激光或电子束照射,也可以形成P—N结。整个照射处理时间只有几秒至几十秒钟,这是一种简单可行的方法。
Conventional diffusion and ion implantation heating annealing to form P-N junctions all involve a prolonged period of high temperature processing, which leads to the reduction of minority carrier lifetime of the semiconductor material, resulting in secondary induced defects that cause poor device parameters influences. Lateral diffusion and impurity redistribution occur simultaneously in the continuous high temperature process, which will limit the device size, high integration and high speed applications. After the ion implantation beam annealing technology, a better solution to this problem. It has been found that P-N junctions can also be formed by depositing or applying a dopant on the surface of a semiconductor material by laser or electron beam irradiation. The entire irradiation processing time of only a few seconds to dozens of seconds, this is a simple and feasible method.