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本文报道我们率先研制出的３～５．３μｍＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱红外探测器的制备和性能．该探测器具有光伏特征，７７Ｋ温度、±７Ｖ外偏压下的５００Ｋ黑体探测率达到约１．０×１０１０ｃｍ·Ｈｚ１／２／Ｗ，并且，与１→２子带间跃迁相对应的光电流峰值响应波长可随外偏压在中红外（３～５．３μｍ）波段作适当调谐．运用平面波展开法，依据样品的阱、垒结构参数，计算了ＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱１→２子带间跃迁的Ｓｔａｒｋ效应，其结果与相应的实验观测结果符合得很好
This paper reports the preparation and performance of 3 ~ 5.3μm InxGa1-xAs / AlyGa1-yAs / AlzGa1-zAs asymmetric step quantum well infrared detector. The detector has a photovoltaic characteristic. The detection rate of a 500K blackbody at a bias voltage of ± 7V at a temperature of 77K reaches about 1.0 × 10 10 cm · Hz 1/2 W, and the photocurrent corresponding to the transition between 1 → 2 subbands Peak response wavelength with external bias in the mid-infrared (3 ~ 5.3μm) band for proper tuning. The Stark effect of the transition between 1 → 2 subbands of the InxGa1-xAs / AlyGa1-yAs / AlzGa1-zAs asymmetric stepped quantum wells was calculated by the plane wave expansion method based on the well and barrier structure parameters of the samples. The results were in good agreement with the corresponding experimental observations The result is in good agreement