论文部分内容阅读
对沉积在硅单晶衬底上的溅射无定形硅薄膜进行电子束退火,由椭圆偏振光谱法测量样品的光学性质,结果表明,在适当的退火条件下,无定形硅的光学性质发生了明显的变化,由无定形态逐渐向晶态转变。
The sputtered amorphous silicon thin films deposited on a silicon single crystal substrate were subjected to electron beam annealing and the optical properties of the samples were measured by ellipsometry. The results showed that the optical properties of amorphous silicon occurred under appropriate annealing conditions Obvious changes, from the amorphous state gradually shift to the crystalline state.