论文部分内容阅读
采用 1.2 μm CMOS工艺技术制作出台阶沟道直接注入 (SCDI)快闪存储器件 ,该种器件具有良好的器件特性 .在 Vg=6 V,Vd=5 V的编程条件下 ,SCDI器件的编程速度是 4 2 μs,在 Vg=8V,Vs=8V的擦除条件下 ,SCDI器件的擦除速度是 2 4 m s.与相同器件尺寸的普通平面型的快闪存储器件相比 ,SCDI器件的特性得到了显著地提高 .在制作 SCDI器件的工艺中 ,关键技术是制作合适的深度和倾斜角度的浅的台阶 ,同时减少在制作 Si3N4 侧墙的刻蚀损伤
Stepped-Channel Direct Injection (SCDI) flash memory devices are fabricated using 1.2 μm CMOS process technology and have good device characteristics. The programming speed of SCDI devices at Vg = 6 V, Vd = 5 V Is 4 2 μs and the erasing speed of an SCDI device is 24 m s at an erasing condition of Vg = 8 V and Vs = 8 V. Compared with the conventional planar flash memory device of the same device size, the SCDI device’s Features have been significantly improved in the production of SCDI devices in the process, the key technology is to make a suitable depth and tilt shallow shallow steps, while reducing the etching damage in the production of Si3N4 sidewalls