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利用 L PCVD Si O2 和多晶硅作牺牲层和悬臂梁技术 ,解决了多晶硅应力释放问题以及微机械开关工艺与 IC工艺兼容技术问题 ,获得了淀积弱张应力的多晶硅膜的最佳工艺条件 ,研制出多晶硅微机械开关 .初步测试出其开关的开启电压为 89V ,开关速度为 5μs,这为研制用于雷达和通讯的全单片集成的 RF MEMS开关系统打下了基础 .
Using L PCVD Si O2 and polysilicon as the sacrificial layer and cantilever technology, the problem of stress release of polysilicon and the compatibility of micro-mechanical switch technology and IC technology are solved, and the optimal process conditions for depositing polysilicon film with weak tensile stress are obtained. A polysilicon micromechanical switch was initially tested with a turn-on voltage of 89V and a switching speed of 5μs, laying the groundwork for the development of a fully monolithic, integrated RF MEMS switching system for radar and communications.