首次报告了采用Langmuir—Blodgett(LB)膜作为抗蚀层进行X射线刻蚀的研究。所用PMMA LB膜的膜厚为1.8～6.3nm,均在15dyne/cm下提拉成膜。在360mA·min的低入射剂量X射线下曝光,获得0.2～0.3μm的分辨率(受限制于所用掩膜片的最高分辨率,0.2～0.3μm)。讨论了LB膜作为抗蚀层在发展由亚微米向纳米量级进行X线刻蚀的潜在作用。 The first report of X-ray etching using a Langmuir-Blodgett (LB) film as a resist was reported. The film thickness of the PMMA LB film used was 1.8 to 6.3 nm, both of which were pulled and formed at 15 dyne / cm. Exposure at a low incident dose of X-rays of 360 mA · min gives a resolution of 0.2-0.3 μm (limited to the highest resolution of the mask sheet used, 0.2-0.3 μm). The potential role of LB film as a resist in the development of X-ray etching from submicron to nanoscale is discussed.