论文部分内容阅读
本文对ＩｎＧａＡｓＰ／ＩｎＰ（ＤＣ－ＰＢＨ）激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究，提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方（Ｂｒ＿２／ＨＢｒ），对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺，同时探索了利用二次外延过程中Ｚｎ扩散来控制限制层（３）掺杂的新方法，在研究基础上制造了重现性好且性能良好的１．３μｍ激光二极管，室温时，阈值电流最低小于２５ｍＡ，典型值为３０ｍＡ，在６０ｍＡ直流电流的驱动下，光输出功率高达１２．５ｍＷ。
In this paper, several key process problems in the epitaxial growth of buried heterojunction liquid crystals in InGaAsP / InP (DC-PBH) lasers are studied, and a new corrosion formulation for obtaining ideal channel geometries for buried growth of channels is proposed (Br_2 / HBr), anodic oxidation was used to remove the damaged layer and harmful impurities in the second epitaxial growth and then the diffusion of Zn during the secondary epitaxy was used to control the doping of the limiting layer (3) The new method, on the basis of the research, creates a reproducible and well-behaved 1.3μm laser diode with a threshold current of less than 25mA and a typical value of 30mA at room temperature with an output power of up to 12 at 60mA DC current .5mW.