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在Ⅲ-Ⅴ族半导体GaAs外延层上共注入Er和O离子(GaAs:Er,O).经面对面优化退火后,光致发光(photoluminescence-PL)谱中观测到对应Er3+第一激发态到基态4I13/2-4I15/2跃迁,其相对强度较单注入Er的GaAs(GaAs:Er)增强10倍,且谱线变窄.从二次离子质谱(SecondaryIonMasSpectrometry-SIMS)和卢瑟福背散射实验给出退火前后Er在GaAs:Er样品中的剖面分布.SIMS测量分别给出O注入前后Er和O在GaAs:Er,O中的深度剖面分布,分析表明Er和O共注入后形成光学激活有效的发光中心.
Co-implantation of Er and O ions (GaAs: Er, O) on the III-V semiconductor GaAs epitaxial layer. After the surface-optimized annealing, the corresponding Er3 + first excited state to the ground state 4I13 / 2-4I15 / 2 transition was observed in the photoluminescence-PL spectra, and its relative intensity was stronger than that of GaAs (GaAs: Er) 10 times, and narrowed spectrum. The profile of Er in GaAs: Er samples before and after annealing was given by Secondary Ion Spectrometry-SIMS and Rutherford backscattering experiments. The SIMS measurements show the depth profiles of Er and O in GaAs: Er and O before and after O injection, respectively. The results show that the Er and O co-implantation form an optically active luminescent center.