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为了验证Ｐ＋－ＧｅｘＳｉ１－ｘ／ｐ－ＳｉＨＩＰ红外探测器同ＭＯＳ信号读出电路单片集成的可行性，对Ｐ＋－ＧｅｘＳｉ１－ｘ／ｐ－Ｓｉ异质结内光发射（ＨＩＰ）红外深测器与ＣＭＯＳ读出电路的工艺兼容性做了分析，提出了一个可行的工艺方案。还采用３μｍＮＭＯＳ工艺，制备了将Ｐ＋－ＧｅｘＳｉ１－ｘ／ｐ－ＳｉＨＩＰ红外探测器与ＮＭＯＳ信号读出开关集成在一起的实验性芯片。在７７Ｋ温度下，分子束外延（ＭＢＥ）生长的Ｐ＋－ＧｅｘＳｉ１－ｘ／ｐ－ＳｉＨＩＰ红外探测器（无介质腔和抗反射层）的黑体探测度Ｄ＊（５００，１０００，１）为１１Ｍｍ·Ｈｚ１／２／Ｗ。实现了７７Ｋ下用ＮＭＯＳ开关对探测器输出信号的选择读出。
In order to verify the feasibility of monolithic integration of the P + -GexSi1-x / p-SiHIP infrared detector with the MOS signal readout circuit, the P + -GexSi1-x / p-Si Heterojunction Internal Light Emitting (HIP) And CMOS readout circuit process compatibility analysis done, put forward a viable process options. An experimental chip integrating the P + -GexSi1-x / p-SiHIP infrared detector and the NMOS signal readout switch was also fabricated using a 3μmNMOS process. The blackbody detection degree D * (500,1000,1) of P + -GexSi1-x / p-SiHIP infrared detector (medium-free cavity and antireflection layer) grown by molecular beam epitaxy (MBE) at 77K is 11Mm · Hz1 / 2 / W. Achieved 77K with NMOS switch on the detector output signal selection read out.