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在自行设计、建立的MOCVD系统上,以Cu(hfac)2为反应前驱物在单晶硅上进行铜薄膜的化学气相沉积,并用AFM、SEM对铜核的成长机理进行了研究．结果表明,反应初期,单晶硅上铜核的成长为岛状,反应后期为先层状后岛状．利用XPS对铜薄膜成长的反应机理进行了探讨,由薄膜的Cu2p、Ols、Fls、Si2p谱可推论出,XPS谱中所出现的C=O、OH及CF3／CF2可能为Cu(hfac),当Cu(hfac)2在高温下分解成Cu(hfac)及hfac后,H2还原表面的hfac生成OH基,反应进行一段时间,OH基浓度大到一定的程度后,与Cu(hfac)2热裂解产生的hfac作用生成HO-hfac并脱附,使表面的铜的氧化物被还原以及发生Cu(hfac)2与H2的氧化还原反应．
On the MOCVD system designed and established by ourselves, the chemical vapor deposition of copper thin film on monocrystalline silicon with Cu (hfac) 2 as precursor and the growth mechanism of copper nuclei by AFM and SEM were studied. The results show that at the initial reaction stage, the growth of copper nuclei on the monocrystalline silicon is island-like, and the late stage of the reaction is the lamellar island. The reaction mechanism of the growth of copper thin films was investigated by XPS. From the Cu2p, Ols, Fls and Si2p spectra of the films, it can be deduced that the C = O, OH and CF3 / CF2 in the XPS spectra may be Cu (hfac) After the decomposition of Cu (hfac) 2 to Cu (hfac) and hfac at high temperature, the hfac on the H2 reduction surface generates OH groups. After the reaction proceeds for a certain period of time, the OH group concentration reaches a certain level, The hfac produced by the cleavage generates HO-hfac and desorbs, reducing the surface copper oxide and causing the redox reaction of Cu (hfac) 2 with H2.