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论述了通过优化难熔金属栅电极的溅射工艺及采用适当的退火温度修复损伤来提高 3nm栅氧 W/ Ti N叠层栅 MOS电容的性能 .实验选取了合适的 Ti N厚度来减小应力 ,以较小的 Ti N溅射率避免溅射过程对栅介质的损伤 ,并采用了较高的 N2 / Ar比率在 Ti N溅射过程中进一步氮化了栅介质 .实验得到了高质量的 C- V曲线 ,并成功地把 Nss(表面态密度 )降低到了 8× 10 1 0 / cm2以下 ,达到了与多晶硅栅 MOS电容相当的水平
In this paper, the performance of 3nm gate oxide W / TiN multilayer gate MOS capacitor is improved by optimizing the sputtering process of the refractory metal gate electrode and repairing the damage by proper annealing temperature.Experimental results show that suitable TiN thickness can reduce the stress , A smaller TiN sputter rate to avoid damage to the gate dielectric during the sputtering process and a higher N2 / Ar ratio to further nitrided the gate dielectric during TiN sputtering.The experimental results show that high quality C-V curve and successfully reduced the Nss (surface state density) below 8 × 10 10 / cm 2 to a level comparable to the polysilicon gate MOS capacitor