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首次利用喷雾热分解法成功地制备出低压ＺｎＯ压敏薄膜．沉积温度３５０℃，沉积时间２ｈ；退火温度６５０℃，退火时间１ｈ．Ｘ射线分析表明薄膜经退火后已良好晶化．其非线性系数α为８．０９；压敏电压Ｖ１ｍＡ为１３．１５Ｖ．实验表明通过制备ＺｎＯ薄膜可得到较低的压敏电压
The first time using spray pyrolysis method successfully prepared low pressure ZnO pressure sensitive film. Deposition temperature 350 ℃, deposition time 2h; annealing temperature 650 ℃, annealing time 1h. X-ray analysis shows that the film has crystallized well after annealing. Its non-linear coefficient α is 8.09; The voltage-dependent voltage V1mA is 13.15V. Experiments show that by preparing ZnO thin film voltage can be lower