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分析了 MOCVD 生长(Al,Ga)As 非有意和有意碳掺杂的气相和表面过程,认为表面和表面附近由于甲基化合物异相分解生成的 CH_3~-自由基是碳掺杂的主要物种,表面原子氢和含氢自由基AsH_m(m≤3)的浓度是影响 CH_3自由基进入晶格的主要因素。在碳掺杂理论模型的基础上讨论了温度、压力、Ⅴ/Ⅲ比、有机源种类对碳掺杂的影响。指出了在引入和不引入掺杂源的情况下,控制碳掺杂的途径。
The gas phase and surface processes of unintentional and intentional carbon doping of MOCVD growth (Al, Ga) As were analyzed. It is considered that the CH_3 ~ - radical generated by the heterogeneous decomposition of methyl compounds on the surface and near the surface is the main species of carbon doping. The concentration of surface atomic hydrogen and hydrogen-containing radicals AsH_m (m≤3) is the main factor that affects the entry of CH_3 radicals into the crystal lattice. Based on the theoretical model of carbon doping, the effects of temperature, pressure, Ⅴ / Ⅲ ratio and organic source species on carbon doping were discussed. The way of controlling carbon doping is pointed out with and without the introduction of doping sources.