观测到纳晶硅表面上氧化结构在692nm和694nm处的尖锐受激发光。这种辐射是514nm激光泵浦发生的。受激发光峰的半高宽为0.5nm(洛伦兹形分布)。这种特殊的纳晶硅氧化结构是通过激光辐照和退火处理后形成的,只有控制好退火的时间,才能出现强烈的受激发光。解释这种受激辐射的模型已提出,其中多孔纳晶硅与氧化硅界面的陷阱态起着重要的作用。 Sharp excitation of the oxidized structure on the surface of the nanocrystalline silicon at 692 nm and 694 nm was observed. This radiation occurs at 514 nm laser pumping. The full width at half maximum of the stimulated emission peak is 0.5 nm (Lorentz-type distribution). This special nanocrystalline silicon oxide structure is formed by laser irradiation and annealing treatment, and only controlled annealing time, in order to have a strong stimulated emission. A model explaining this stimulated emission has been proposed, in which the trap state of the porous nanocrystalline silicon to the silicon oxide interface plays an important role.