论文部分内容阅读
用二维 MEDICI商用器件模拟软件对双 MOS门极控制的发射极开关晶闸管 EST( Emitter Switched Thyristor)的正偏置安全工作区 FBSOA( Forward Biased Safe- Operation-Area)及其关断动态的电流分布进行了模拟研究 .证明该器件采用 P型转向器 ( diverter)与双MOS门极相结合的结构使得空穴电流分流从而显著地提高了 EST的开关能力 ,其 FBSOA也有明显展宽
The forward biased Safe-Operation-Area (FBSOA) and the off-state current distribution of the double MOS gate-controlled emitter-emitter thyristor EST (Emitter Switched Thyristor) Simulation results show that this device uses a combination of a P-type diverter and a dual MOS gate to shunt the hole current, thereby significantly improving the switching performance of the EST. The FBSOA also has a significant broadening