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本文分析了具有偏置栅又有延伸源场极的高压MOS结构和双极型器件复合结构中产生可控硅效应的机理,从而得出如何在材料、几何结构和工艺参数上采取措施,抑制和防止可控硅效应的产生。
This paper analyzes the mechanism of the SCR effect in high voltage MOS structure and bipolar device with offset gate and extended source and field, and then draws a conclusion on how to take measures to suppress the material, geometry and process parameters And prevent the production of thyristor effect.