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介绍了离子注入ⅢⅤ族化合物半导体的特点,论述了离子注入ⅢⅤ族化合物半导体获得n 、p 型及深补偿能级的研究现状,讨论了离子注入ⅢⅤ族化合物后的退火及其保护问题。
The characteristics of ion-implanted III-V compound semiconductors are introduced. The research status of n, p-type and deep compensation levels for ion-implanted III-V compound semiconductors is discussed. The annealing and Its protection issues.