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借助剖面电子显微学(TEM)和离子背散射沟道技术研究了SIMOX衬底上分子束外延生长的Si/Ge_(0.5)SI_(0.5)应变层超晶格薄膜。实验结果表明Si/Ge_(0.5)Si_(0.5)应变层超晶格能成功地生长在SIMOX衬底上。由于si/Ge_(0.5)Si_(0.5)膜与SIMOX衬底之间晶格失配,引起晶格畸变。分析SIMOX超晶格的显微结构,Si/Ge_(0.5)Si_(0.5)超晶格内存在的位错与SIMOX衬底内的位错密度有关引言Si衬底上分子束外延Si/Ge_(0.5)Si_(0.5)应变层超晶格是基础研究和器件应用的重要研究领域。某些以Si/Ge_(0.5)Si_(0.5)层为基础的高质量器件已研制成功。例如异质结的双极型晶体管。
Si / Ge_ (0.5) SI_ (0.5) strain-gauge superlattice thin films grown by molecular beam epitaxy on SIMOX substrates were studied by cross-sectional electron microscopy (TEM) and ion backscattering channel techniques. The experimental results show that the superlattice of Si / Ge_ (0.5) Si_ (0.5) strain layer can successfully grow on SIMOX substrate. Due to the lattice mismatch between the Si / Ge_ (0.5) Si_ (0.5) film and the SIMOX substrate, lattice distortion is caused. The microstructure of SIMOX superlattices is analyzed. The dislocations existing in Si / Ge_ (0.5) Si_ (0.5) superlattices are related to the dislocation density in SIMOX substrates. Introduction The molecular beam epitaxy of Si / Ge_ 0.5) Si_ (0.5) Strain Layers Superlattices are important research areas for basic research and device applications. Some high-quality devices based on Si / Ge_ (0.5) Si_ (0.5) layers have been developed. Such as a heterojunction bipolar transistor.