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研究了InP掺杂浓度分布,确认测量系统的可信性.在多元材料生长中,组分控制重复性欠佳的情况下,根据每片材料的C~(-2)-V特性测出内建电势V_D,可以得出接近于材料实际的掺杂浓度分布.测得掺杂浓度在10~(16)cm~(-3)的Ga_(0.47)In_(0.53)As的V_D约0.3V.结果表明,用作长波长的光探测器的N型三元层掺杂分布平坦.闭管锌扩散形成的P-N结为突变结型.
The distribution of InP doping concentration was investigated to confirm the reliability of the measurement system.Under the condition of poor repeatability of the composition control in the growth of the multi-component materials, according to the C ~ (-2) -V characteristic of each material, The potential V_D of the material can be obtained and the actual doping concentration distribution can be obtained.The V_D of Ga_ (0.47) In_ (0.53) As with doping concentration of 10 ~ (16) cm ~ (-3) is about 0.3V. The results show that the N-type ternary layer used as a long wavelength photodetector has a flat distribution of doping, and the PN junction formed by closed-tube zinc diffusion is a mutant junction.