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测量了Ｓｉ衬底上生长的ＧａＡｓ薄膜中与深中心有关的发光带的变温光谱，研究了０．７８ｅＶ、０．８４ｅＶ和０．９３ｅＶ发光带的峰值位置和发光强度随着温度的变化关系，发现它们的发光强度随温度的变化服从描述非晶半导体中局域态发光的公式。最后讨论了这些发光带的来源。
The temperature-dependent spectra of the light-emitting bands associated with the deep center of GaAs films grown on Si substrates were measured. The relationship between the peak positions and the luminescence intensities of 0.78eV, 0.84eV and 0.93eV emission bands with temperature was studied. It is found that their luminescence intensity changes with temperature obeys the formula that describes the luminescence of the localized states in amorphous semiconductors. Finally, the source of these glow bands is discussed.