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利用自行搭建的实验平台,测试了高纯MgO晶体和Sc掺杂MgO晶体的紫外光光致发光(PL)光谱,发射峰值分别位于389.31、498.61nm、712.44和749.06nm,其可见光发射区和红外发射区主要对应于MgO晶体中由O空位构成的F色心和F+色心通过激发和退激发机制发射;在不同温度退火条件下测试Sc掺杂MgO晶体的PL光谱,并利用高斯分解实现了Sc掺杂MgO晶体中F色心和F+色心的定位。结果表明,高温退火处理可以有效降低MgO晶体表面的污染,进而提高晶体的光电活性;Sc掺杂导致MgO晶体可见光发射区域的蓝移和增强,其中F+色心对于温度的依赖性较强。
Ultraviolet photoluminescence (PL) spectra of high purity MgO and Sc-doped MgO crystals were measured by using self-built experimental platform. The emission peaks were at 389.31, 498.61nm, 712.44 and 749.06nm, respectively. The visible light emission region and infrared The emission region mainly corresponds to the F color center and the F + color center formed by O vacancies in the MgO crystal and is emitted by the excitation and de-excitation mechanisms. The PL spectrum of the Sc-doped MgO crystal is tested under different annealing temperatures and Gaussian decomposition Localization of F Color Centers and F + Color Centers in Sc - doped MgO Crystals. The results show that high temperature annealing can effectively reduce the pollution of the surface of MgO crystal, and then increase the optical activity of the crystal. Sc doping results in the blue shift and enhancement of the visible light emission area of MgO crystal, and the dependence of the color center on the temperature is strong.