InP及其三元,四元化合物材料,在微波器件和光电器件中的应用日益广泛,但是,目前尚缺乏一个简便的方法同时测量生长材料的载流子浓度,外延层厚度和P—N结位置等参数。电化学C—V法是70年代发展起来的一种新方法,它利用适当的电解液作为可控阳板溶解的介质,同时与半导体形成Mott-Schottky接触,达到连续浓度分布测定。该法在测量GaAs材料特性方面已有较大的进展,最近Ambridge报导了n—InP材料的浓度与分布测量结果。但对于多层异质结材料的载流子浓度分布尚未见报导。本文以GaInAsP/InP双异质结液外材料 InP and its ternary and quaternary compound materials are widely used in microwave devices and optoelectronic devices. However, there is a lack of an easy way to simultaneously measure the carrier concentration, epitaxial layer thickness and P-N junction of growth materials Location and other parameters. The electrochemical C-V method was developed in the 1970s as a new method that uses a suitable electrolyte as the dissolvable medium for the controllable solar panel while forming a Mott-Schottky contact with the semiconductor to achieve a continuous concentration profile. This method has made great progress in measuring the properties of GaAs materials. Ambridge recently reported the concentration and distribution measurements of n-InP materials. However, there is no report on the carrier concentration distribution in multi-layer heterojunction materials. In this paper, GaInAsP / InP double heterojunction liquid material