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本文论述了分子束外延(MBE)生长的Al_(0.35)Ga_(0.65)As/GaAs双异质结双极型晶体管(DH BJT)的制造和试验。基区宽度为2000(?)和500(?)的器件,在集电极电流和基极电流变化范围大的情况下,其共发射极电流增益分别达到325和500左右。为获得这样高的电流增益,需采用足够高的铝克分子分数和双异质结结构,生长参数必须严格,最佳化且准确控制。这些电流增益与过去用分子束外延生长的基区厚度为500(?)的单异质结双极型晶体管的最好结果(电流增益为120)进行了比较。
In this paper, fabrication and experiment of Al_ (0.35) Ga_ (0.65) As / GaAs double heterojunction bipolar transistor (DH BJT) grown by molecular beam epitaxy (MBE) are discussed. The base width of 2000 (?) And 500 (?) Of the device, in the collector current and base current changes in a wide range of circumstances, the total emitter current gain of 325 and 500, respectively. In order to obtain such a high current gain, a sufficiently high aluminum molecular fraction and a double heterojunction structure must be used, and the growth parameters must be strictly, optimally and accurately controlled. These current gains are compared with the best results (current gain of 120) for single heterojunction bipolar transistors with a base thickness of 500 Å grown by molecular beam epitaxy in the past.