论文部分内容阅读
基于TSMC 90 nm CMOS工艺设计了一款18~100 GHz的超宽带无源漏极混频器,混频器采用了均匀分布式结构,通过牺牲延迟来获得超宽带带宽。同时,提出了一种栅极电压优化技术,通过优化偏置电压VGS来最小化CMOS混频器的传输损耗。混频器带宽为18~100 GHz,带宽内变频损耗为(4±1)dB,端口隔离度优于15 dB,45 GHz处1 dB压缩点输入功率为4 dBm,芯片面积仅为0.36 mm2。该混频器在低功耗的环境下具有良好的变频损耗性能,非常适合用在低功耗的通信系统当中。
An ultra-wideband passive drain mixer 18 to 100 GHz based on the TSMC 90 nm CMOS process is designed. The mixer uses a uniform distributed architecture to achieve ultra-wideband bandwidth at the expense of delay. Meanwhile, a gate voltage optimization technique is proposed to minimize the transmission loss of the CMOS mixer by optimizing the bias voltage VGS. The mixer bandwidth is 18 to 100 GHz, the conversion loss in the bandwidth is (4 ± 1) dB, the port isolation is better than 15 dB, the input power at 1 dB compression point at 45 GHz is 4 dBm, and the chip area is only 0.36 mm2. The mixer has good conversion loss performance in a low-power environment and is well suited for use in low-power communication systems.