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讨论了量子阱红外光电探测器的器件物理学和探测性能。在这些结果的基础上,制造了128×128元大面积二维阵列,并测量了其性能。优异的长波成象结果(99％的象素工作,噪声等效温差NE△T=10mK)显示出这种新型砷化镓量子阱红外光电探测器工艺的潜力。
The device physics and probing performance of quantum well infrared photodetectors are discussed. Based on these results, a large 128 × 128 element 2D array was fabricated and its performance was measured. The excellent longwave imaging results (99% pixel work, noise equivalent temperature difference NEΔT = 10mK) show the potential of this new GaAs quantum well infrared photodetector process.