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用磁控溅射SiO2膜作为台面SiGe／SiHBT的表面保护纯化膜和光刻掩膜．测试分析了溅射工艺对SiO2膜的性质和SiGe／SiHBT性能的影响．研究发现，较高的衬底温度（200℃）有得于改善SiO2膜的质量．用溅射SiO2方法制备的HBT的电流增益明显高于用热分解正硅酸乙脂方法淀积SiO2制备的HBT．这说明溅射法避免了高温引起SiGe层应变驰豫所造成的HBT性能变差．
Magnetron sputtering SiO2 film as a mesa SiGe / SiHBT surface protection purification film and lithography mask. The influence of the sputtering process on the properties of SiO2 films and SiGe / SiHBT properties was analyzed. The study found that a higher substrate temperature (200 ° C) was obtained to improve the quality of the SiO2 film. The current gain of HBT prepared by sputtering SiO2 method is obviously higher than that of HBT prepared by SiO2 deposition by thermal decomposition of TEOS. This shows that the sputtering method to avoid the high temperature induced strain relaxation of the SiGe layer caused by deterioration of the performance of HBT.