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GaAs的热处理工作自1960年以来就已进行,但到了70年代前后,它成了一个比较时兴的课题,当时的背景可能是由于体效应器件的盛行,自1975年以来不少作者开始研究掺铬或掺氧的GaAs材料的热处理工作,1975年Barrcra首先提出掺铬的半绝缘GaAs衬底在液相外延生长之前表面出现了一个导电层,随后Kaufmann也进行了这方面的工作。Lum自1977年以来模拟液相外延工艺对掺铬的GaAs进行热处理,并用光致发光(以下简称PL)等方法测量了700～900℃热处理对掺铬GaAs的影响。J.Hallais等人模拟汽相外延工艺研究了掺铬GaAs的热处理,他指出GaAs在氢气流
GaAs heat treatment has been carried out since 1960, but by the 1970s, it became a rather fashionable topic. At that time, the background might be due to the prevalence of body-effect devices. Since 1975, many authors have started to study the effects of doping Or oxygen-doped GaAs material, Barrcra first proposed in 1975 that a chromium-doped semi-insulating GaAs substrate had a conductive layer on the surface before the liquid-phase epitaxial growth. Subsequently, Kaufmann also performed this work. Lum simulation of liquid-phase epitaxy since 1977, the chrome-doped GaAs heat treatment and the use of photoluminescence (hereinafter referred to as PL) and other methods to measure the 700 ~ 900 ℃ heat treatment of chromium-doped GaAs effect. J. Hallais et al simulated vapor phase epitaxy process of chromium-doped GaAs heat treatment, he pointed out that GaAs in the hydrogen flow