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日本东京芝浦电气综合研究所研制成功了一种使用C_2F_6气体反应性高子腐蚀装置,可使SiO_2的腐蚀速率为硅的25倍以上。 这种离子腐蚀装置不同于平行电极型于腐蚀装置,它采用反应性气体。对日本电子研制的冷阴极磁控管离子枪进行了改良,用希土磁石SmC_(05)代替电磁线圈。通过正交磁场电子漂移而产生放电,离子由电场直接引出,当外加电压为500伏、C_2F_6气体 压力为7×10~(-14)乇、离子电流为0.5毫安/厘米~2时,SiO_2与Si的腐蚀速率比为10倍以上。如果气体中添加少量的H_2,则腐蚀速率比可达25倍以上。目前,为了阐明该装置的离子腐蚀机理,所以对衬底的损伤和批量生产尚未特别考虑。
Japan's Shibaura Electric Institute of Tokyo has developed a successful use of C_2F_6 gas-reactive high-eclipse device, the corrosion rate of SiO_2 can be 25 times more silicon than silicon. This ion etching device is different from the parallel electrode type in the etching device, which uses a reactive gas. Japan's electronic research and development of cold cathode magnetron ion gun has been improved, with the earth magnet SmC_ (05) instead of the electromagnetic coil. When the applied voltage was 500 V, the pressure of C_2F_6 gas was 7 × 10 ~ (-14) Torr, and the ion current was 0.5 mA / cm ~ 2, the discharge of SiO_2 The corrosion rate ratio with Si is 10 times or more. If the gas to add a small amount of H_2, the corrosion rate than up to 25 times. At present, in order to clarify the mechanism of ion etching of the device, damage and mass production of the substrate have not been specially considered.