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通过化学还原和热处理的方法制备出了具有核壳结构的Ni/NiO纳米线,利用扫描电子显微镜、X射线衍射、热重分析等手段对不同退火温度下的样品进行了结构表征和分析,分析了样品微结构对单根Ni/NiO纳米线器件阻变性能的影响。结果表明:随着退火温度的升高,Ni/NiO纳米线表面逐渐光滑,NiO薄膜层结晶度提高,NiO平均粒径逐渐增大,氧化层也逐渐变厚。I-V测试曲线表明,在300℃退火条件下,单根Ni/NiO纳米线器件展现出优异的阻变性能,开关比大,开关阈值电压小;但随着温度的升高,单根Ni/NiO纳米线器件阻变性能明显下降,其原因可能是因为退火温度的进一步升高导致了NiO薄膜层厚度的增加并提高了薄膜的结晶质量阻碍了导电细丝在NiO层内的产生造成的,只有在适当温度处理下出现的微结构才能使Ni/NiO纳米线器件具有最优化的阻变性能。
The Ni / NiO nanowires with core-shell structure were prepared by chemical reduction and heat treatment. The structures of the samples were characterized by scanning electron microscopy, X-ray diffraction and thermal gravimetric analysis. Effect of Sample Microstructure on the Resistance Modification of Single Ni / NiO Nanowire Devices. The results show that with the increase of annealing temperature, the surface of Ni / NiO nanowires becomes smooth and the crystallinity of NiO films increases. The average particle size of NiO gradually increases and the oxide layer becomes thicker. IV curves show that the single Ni / NiO nanowire device exhibits excellent resistance to change at 300 ℃ annealing temperature, the switching ratio is large, and the switching threshold voltage is small. However, with the increase of temperature, a single Ni / NiO The reason is that the further increase of annealing temperature leads to the increase of the thickness of the NiO thin film and the increase of the crystalline quality of the thin film, which hinders the production of conductive filaments in the NiO layer. Only the The microstructure appearing under appropriate temperature treatment can make the Ni / NiO nanowire device have the best resistance to change.