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利用新研制出的垂直式低压 CVD(L PCVD) Si C生长系统 ,获得了高质量的 5 0 mm 3C- Si C/ Si(111)衬底材料 .系统研究了 3C- Si C的 n型和 p型原位掺杂技术 ,获得了生长速率和表面形貌对反应气体中 Si H4 流量和 C/ Si原子比率的依赖关系 .利用 Hall测试技术、非接触式方块电阻测试方法和 SIMS,分别研究了 3C- Si C的电学特性、均匀性和故意调制掺杂的 N浓度纵向分布 .利用 MBE方法 ,在原生长的 5 0 mm 3C- Si C/ Si(111)衬底上进行了 Ga N的外延生长 ,并研究了 Ga N材料的表面、结构和光学特性 .结果表明 3C- Si C是一种适合于高质量无裂纹 Ga N外延生长的衬底或缓冲材料 .
A high quality 50 mm 3C-Si C / Si (111) substrate was obtained by using the newly developed vertical low-pressure CVD (L PCVD) Si C growth system. The effects of n-type and p-type in-situ doping technique, the dependence of growth rate and surface morphology on Si H4 flow rate and C / Si atomic ratio in the reaction gas was obtained.Using Hall test technique, non-contact square resistance test method and SIMS The electrical properties of 3C-Si C, the uniformity and the longitudinal distribution of intentionally-doped N concentration were investigated by using the MBE method. GaN epitaxy was performed on the grown original 50 mm 3C-Si C / Si (111) And the surface, structure and optical properties of Ga N materials have been studied.The results show that 3C-Si C is a suitable substrate or buffer material for high-quality crack-free Ga N epitaxial growth.