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J.B.耿氏在1963年发现加上高电场的n型砷化镓、磷化铟单晶中有电流振荡现象,这种在不含pn结的本体半导体(Bulk Semiconductor)中的高电场电子(多数载流子)效应和它的振荡频率已进入以往的半导体元件难以直接获得的微波范围,这两个事实引起了许多人的兴趣,此后,在1970年,利用这种效应(即耿效应)制出的可供应用的微波振荡元件已有成品出售。
JB Gunn discovered in 1963 that with the high electric field of n-type gallium arsenide, current oscillations are present in indium phosphide single crystals. This high field electron in bulk semiconductors without pn junctions (the majority The fact that the carrier effect and its oscillation frequency have entered into the microwave range that the conventional semiconductor elements are hard to obtain directly has attracted much interest. After that, in 1970, this effect was used The available microwave oscillators are available for sale.