本文介绍了GaAs MESFET器件低频噪声测量系统,以及该器件低频噪声的特点。在分析器件中低频噪声可能来源的基础上,首次采用高能电子辐照技术并结合变温噪声测量、变频C-V等方法,对器件低频噪声产生机理进行了实验研究。 This article describes the GaAs MESFET device low-frequency noise measurement system, as well as the low-frequency noise characteristics of the device. Based on the analysis of possible sources of low-frequency noise in the device, the low-frequency noise generation mechanism of the device was experimentally studied for the first time by using high-energy electron irradiation technology combined with temperature noise measurement and frequency conversion C-V method.