论文部分内容阅读
本文首先分析了影响pH-ISFET阈值电压的几个因素.随后给出了在不同的离子注入参数下SOS型MISFET的阈值电压(V_T)_M及对应的参比电极-溶液-pH-ISFET的阈值电压(V_T)_R和△V_T=(V_T)_R-(V_T)_M的实测值曲线.最后对结果进行了讨论.
This paper first analyzes several factors that affect the threshold voltage of the pH-ISFET, and then gives the threshold voltage (V_T) _M for the SOS-type MISFET and the corresponding reference electrode-solution-pH-ISFET threshold under different ion implantation parameters Voltage (V_T) _R and △ V_T = (V_T) _R- (V_T) _M. Finally, the results are discussed.