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常规平面工艺生产的集成注入逻辑 NPN 晶体管的基区内存在着阻止电子扩散运动的减速电场。它对少子分布的影响常超过复合效应的影响。利用平均减速电场的概念,计算了基区非平衡载流子的分布函数和电流增益,引入了包含减速电场作用的等效扩散系数。理论估算的电流密度分配可以解释 Breger 的实验规律。理论导出的电流增益表示式包含了 Klaassen 导出的类似的公式。讨论了电流增益和收集区面积与基区面积比之间的关系,电流增益和扇出的关系,并与实验结果进行了比较。为了说明基区电阻对几何位置不同的集电极的电流增益的影响,采用了使问题简化的等效电阻方案。
Conventional planar technology produces an integrated injection logic NPN transistor in the base area there is to prevent the proliferation of electric diffusion motion deceleration electric field. Its effect on the distribution of fewer children often exceeds the effect of compound effects. By using the concept of averaged deceleration electric field, the distribution function and current gain of non-equilibrium carrier in the base area are calculated, and the equivalent diffusion coefficient including deceleration electric field is introduced. Theoretical estimates of the current density distribution can explain the experimental rules of Breger. The theoretical derivation of the current gain representation includes a similar formula derived by Klaassen. The relationship between the current gain and the area of the collector and the area ratio of the base, the relationship between the current gain and the fan-out is discussed and compared with the experimental results. To illustrate the effect of base resistance on the current gain of collectors of different geometries, an equivalent resistance scheme to simplify the problem was used.