论文部分内容阅读
本文详细叙述了7～10千兆赫2.5瓦pn结砷化镓功率崩越管简化的设计方法和研究结果.200℃结温下获得的最佳电性能为7.76千兆赫、振荡输出功率2.6瓦.效率19.3%.用本器件研制的注入锁定放大器已成功地取代微波通讯机中的行波管.
This paper describes in detail the simplified design and results of a 7-10 GHz 2.5-W pn-junction gallium arsenide power-down transistor with an optimum electrical performance of 7.76 GHz and an oscillating output of 2.6 W at a junction temperature of 200 ° C. 19.3% efficiency. The injection-locked amplifier developed with this device has successfully replaced the traveling wave tube in a microwave communication device.