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据报导,苏联列宁格勒加里宁工学院目前正在进行用电子辐照磷化铟的试验,这种试验目前已告一段落。试验的目的在于探索电子辐照对掺3d元素例如掺铬、铁和锰的磷化铟性质的影响,检验磷化铟材料在电子束加工时的性能变化,并且测定这些杂质的电离能,以便在对磷化铟材料进行电子束加工时考虑到这种因素的影响。加里宁工学院的试验表明,在用电子辐照之后,在掺3d元素的磷化铟中,费米能级钉扎在E_c-0.35eV附近。在这种情况下,p-InP中载流子的迁移率变化速度比n-InP中的变化速度大得多。用浅能级的杂质(Te、Zn等)掺
It is reported that Kaliningrad Institute of Technology in Leningrad, the Soviet Union, is currently conducting the experiment of irradiating indium phosphide with electrons, and the trial is now over. The purpose of the experiment was to explore the effect of electron irradiation on the properties of indium phosphides doped with 3d elements such as chromium, iron and manganese, verify the performance changes of indium phosphide materials during electron beam processing and measure the ionization energies of these impurities in order to The effect of this factor is taken into account when electron beam processing of the indium phosphide material. Experiments at Kalinin Institute of Technology show that Fermi levels are pinned around E_c-0.35eV in 3d-doped indium phosphide after irradiation with electrons. In this case, the rate of change of carrier mobility in p-InP is much greater than the rate of change in n-InP. With shallow levels of impurities (Te, Zn, etc.) doped