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本文介绍了在Si(100)衬底上异质外延生长超导薄膜过渡层的方法,研究了过渡层的晶体性质和表面形貌。在Si(100)衬底上外延生长的过渡层依次为Y_2O_3(110)、ZrO_2(100)和Y_2O_3(100)/ZrO_2(100)。最上层生长的即是YBa_2Cu_3O_(7-x)超导膜层,其T_c值达88K。 过渡层用真空蒸镀的方法。首先蒸镀金属钇,并以氧等离子体将其氧化,制成Y_3O_3过渡层。采用ZrO_2晶拉电子束蒸发沉积制成了ZrO_2过渡层。生长器中基础压力为1.33×10~(-5)Pa,生长过程中压力
In this paper, a method of heteroepitaxially growing a superconducting thin film transition layer on a Si (100) substrate is introduced, and the crystal properties and the surface topography of the transition layer are studied. The transitional layers epitaxially grown on Si (100) substrates are Y_2O_3 (110), ZrO_2 (100) and Y_2O_3 (100) / ZrO_2 (100). The uppermost layer of growth is YBa_2Cu_3O_ (7-x) superconducting film, the T_c value of 88K. The transitional layer is vacuum-evaporated. First, metal yttrium is vapor-deposited and oxidized by oxygen plasma to form a transition layer of Y_3O_3. The ZrO 2 transition layer was deposited by electron beam evaporation of ZrO 2 crystal. The basic pressure in the growth of 1.33 × 10 ~ (-5) Pa, the pressure during growth