SOI-MOSFET相关论文
对垂直于沟道的二维电势分布函数提出了一种新的近似,给出了基于这种近似的杂质浓度呈高斯分布的非均匀掺杂全耗尽SOI-MOSFET的阈......
本文系统描述了全耗尽短沟道LDD/LDSSOIMOSFET器件模型的电压电压特性。该模型扩展了我们原有的薄膜全耗尽SOIMOSFET模型,文中着重分析了器件进入饱和区后出现......
Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-I
The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit i......