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一、引言耿效应二极管的耗散功率密度和与之相关的温升限制了它在高工作比下产生微波功率。GaAs 的负微分迁移率在很高温度下消失,有一些证据表明,当温度高于600°～700°K 时,负微分迁移率太小,不足以引起振荡。在以前关于耿效应二极管温度的一些文章中,均假定功率耗散密度在整个二极管中是均匀的。对于以限累模式工作的二极管这是有效的,但是当二极管以通常的渡越时间偶极畴模和渡越对间积累模工作时,阳极接触处的耗散比阴极接触
I. INTRODUCTION Geng effect diode dissipation power density and the temperature rise associated with it limits the microwave power generated at high operating ratio. The negative differential mobility of GaAs vanishes at very high temperatures. There is some evidence that the negative differential mobility is too small to cause oscillations at temperatures above 600-700 ° K. In some of the previous articles on GDN diodes, it was assumed that the power dissipation density was uniform throughout the diode. This is valid for diodes operating in a limited-voltage mode, but when the diode accumulates mode-dip work between the dipole modes and transitions at the normal transit time, the dissipation at the anode contact is greater than the cathode contact