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有报道称,近期美国的2份防务合同清楚表明,军用雷达界正在将其重点转向新的氮化镓(GaN)器件。GaN半导体器件可以使得雷达功率更加强大,电能转换效率更高,有工业界人士甚至把GaN器件的使用称为“继硅半导体器件之后的最重大事件”。雷声公司最近从美国导弹防御局(MDA)获得一份改造其AN/TPY-2雷达的生产线并使之采用氮化镓(GaN)器件的合同,同时还有一份制造GaN雷达的后续合同仍在谈判之中。AN/TPY-2雷达是一种远
It has been reported that two U.S. defense contracts recently made it clear that the military radar community is turning its focus to new GaN devices. GaN semiconductor devices can make the radar more powerful, more efficient energy conversion, there are people in the industry even the use of GaN devices called “the most significant event after the silicon semiconductor device ”. Raytheon recently received a contract to revamp its AN / TPY-2 radar and make it available with gallium nitride (GaN) devices from the U.S. Defense Missile Defense Agency (MDA), along with a follow-on contract to manufacture GaN radars During the negotiations. AN / TPY-2 radar is a far away