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报道了８～１６ＧＨｚＧａＡｓ单片宽带分布放大器的设计与制作。单级ＭＭＩＣ电路采用三个栅宽为２８０μｍ的ＧａＡｓＭＥＳＦＥＴ作为有源器件，芯片尺寸为１．１ｍｍ×１．６ｍｍ。在８～１６ＧＨｚ频率范围，用管壳封装的两级级联放大器增益Ｇ＿ａ，为１１．３±１ｄＢ，噪声系数Ｆ＿ｎ＜６ｄＢ，输出功率Ｐ＿（１ｄＢ）＞１６ｄＢｍ。
Reported 8 ~ 16GHzGaAs monolithic broadband distribution amplifier design and production. The single-stage MMIC circuit uses three GaAsMESFETs with a gate width of 280μm as the active device. The chip size is 1.1mm × 1.6mm. In the frequency range of 8 ~ 16GHz, the two-stage cascaded amplifier gain G_a is 11.3 ± 1dB, the noise figure F_n <6dB and the output power P_ (1dB)> 16dBm.