采用金属有机化学气相沉积方法在无掩模的直径为400nm的圆柱Si(100)图形衬底上外延生长了GaAs薄膜。图形衬底采用纳米压印技术及反应离子刻蚀技术制作而成。运用两步法生长工艺在此图形衬底上制备了厚度为1.8μm的GaAs外延层。GaAs的晶体质量通过腐蚀坑密度和透射电镜表征。图形衬底上的GaAs外延层表面腐蚀坑密度约1×107 cm-2,比平面衬底上降低了两个数量级。透射电镜观测显示大部分产生于GaAs/Si异质界面的穿透位错被阻挡在圆柱顶部附近。 A GaAs thin film was epitaxially grown on a unmasked cylindrical Si (100) substrate with a diameter of 400 nm by a metal-organic chemical vapor deposition method. Graphic substrate using nano-imprint technology and reactive ion etching technology made. A two-step growth process was used to fabricate a GaAs epitaxial layer with a thickness of 1.8μm on this patterned substrate. The crystal quality of GaAs is characterized by etch pit density and transmission electron microscopy. The etching pit density of the GaAs epitaxial layer on the patterned substrate is about 1 × 10 7 cm -2, which is two orders of magnitude lower than that on the planar substrate. Transmission electron microscopy revealed that most of the dislocations that originate in the GaAs / Si hetero-interface were blocked near the top of the cylinder.