论文部分内容阅读
MOS电路的按比例缩小,除了常见的短沟道问题外,还导致晶体管窄条宽度的增加。在本文中,我们提出一种技术,它用高压氧化生长隔离氧化层的方法来减小这些窄条宽度效应。高压氧化允许减小沟道阻挡剂量,从而减小壕沟浸入,同时保持器件间足够的隔离性能。本文提供了壕沟浸入、厚场晶体管和壕沟二极管的数据以及提供了模拟结果的讨论。探讨了这些数据之间的相互关系以及折衷选择。
The scaling down of MOS circuits, in addition to the common short-channel problems, also results in an increase in the width of the transistor strips. In this paper, we propose a technique that uses high-pressure oxidation to grow isolated oxide layers to reduce these narrow width effects. High-pressure oxidation allows for a reduction of the channel blocking dose, thereby reducing trench dips while maintaining adequate isolation between the devices. This article provides data on the ditch immersion, thick field transistors and trenched diodes and provides a discussion of the simulation results. Explored the interrelationship between these data as well as eclectic choices.