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具有无机-有机杂化钙钛矿结构的CH_3NH_3Pbl_3通常偏向于显示n型半导体特性,本文以五氧化二钽(Ta_2O_5)作为绝缘层,制备了基于钙钛矿CH_3NH_3Pbl_3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH_3NH_3Pbl_3所具有的p型场效应特性,空穴场效应迁移率达到8.7×10~(-5)cm~2·V~(-1)·s~(-1),此暗态空穴迁移率比原有报道的基于CH_3NH_3Pbl_3多晶薄膜的SiO_2底栅场效应晶体管提高了一个数量级。此外,光照对CH_3NH_3Pbl_3单晶场效应晶体管的性能有强烈影响。与底栅结构CH_3NH_3Pbl_3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm~(-2)的光照仍可使CH_3NH_3Pbl_3单晶场效应晶体管的空穴电流提高一个数量级(V_(GS)(栅源电压)=V_(DS)(漏源电压)=20 V),光响应度达到2.5 A·W~(-1)。本文工作实现了对CH_3NH_3Pbl_3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH_3NH_3Pbl_3同样具有制备成双极性晶体管的潜力。
CH_3NH_3Pbl_3 with inorganic-organic hybrid perovskite structure is usually biased towards n-type semiconductor. In this paper, a top-gate structure field-effect transistor based on perovskite CH_3NH_3Pbl_3 single crystal was prepared by using tantalum pentoxide (Ta_2O_5) , The p-type field effect characteristic of CH_3NH_3Pbl_3 is more clearly observed in the dark state, and the field-effect mobility of the hole field reaches 8.7 × 10 -5 cm -2 · V -1 · s -1 ). The hole mobility of this dark state is an order of magnitude higher than the previously reported SiO 2 bottom gate field effect transistor based on the CH_3NH_3Pbl_3 polycrystalline thin film. In addition, the illumination has a strong influence on the performance of the CH_3NH_3Pbl_3 single-crystal field-effect transistor. Different from the CH_3NH_3Pbl_3 multi-field FET, the hole current of CH_3NH_3Pbl_3 single-crystal field-effect transistor can be increased by one order of magnitude even with the shielding of the gate and the insulating layer (5.00 mW · cm -2) V_ (GS) (gate-source voltage) = V DS (drain-source voltage) = 20 V) and the photoresponse reaches 2.5 A · W -1. The work of this paper realizes the selective regulation of the CH_3NH_3Pbl_3 field-effect transistor carrier transport, indicating that CH_3NH_3Pbl_3 has the potential to be used as a bipolar transistor by proper device design without any external factors.