论文部分内容阅读
提出一种宽频带GaN HEMT逆F类功率放大器设计方法,并完成S波段高效率功率放大器的研制。首先对改进的GaN HEMT Angelov大信号缩放模型进行分析,确定功放管栅宽模型参数;然后通过输出电容补偿、负载牵引技术获得最佳输入、输出阻抗,设计谐波控制网络实现对谐波阻抗的峰化;最后基于宽频带、高效率原则完成电路仿真版图优化。为验证该方法,基于国产GaN HEMT(栅宽1.25mm)设计了一款中心频率2.9GHz,带宽大于40%的高效率逆F类功放,测试结果表明频带内输出功率均大于3W、漏极效率达到60%。
A wideband GaN HEMT inverse F-type power amplifier design method is proposed, and the S-band high efficiency power amplifier is developed. Firstly, the improved GaN HEMT Angelov model is analyzed to determine the parameters of the amplifier-FET gate-width model. Then, the output and input impedance are obtained through the output capacitor compensation and load-pull technique. The harmonic control network is designed to realize the harmonic impedance Peaking; Finally, based on the principle of wideband, high efficiency circuit simulation layout optimization. To validate this method, a high-efficiency inverse F-type power amplifier with a center frequency of 2.9GHz and a bandwidth of more than 40% is designed based on a domestic GaN HEMT (gate width of 1.25mm). The test results show that the output power in the frequency band is greater than 3W, Reached 60%.