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硅量子点具有新颖的光电性能,有望在光电、光伏和生物标记等领域发挥重要作用。为了使硅量子点表现出优异而稳定的光电性能,能够有效地被应用,通常需要对硅量子点的表面进行改性。针对表面起初被氢或氯钝化的硅量子点,详细地介绍了最近国内外在硅量子点表面改性方面的研究进展,重点介绍了表面改性技术对硅量子点的分散和发光等性能的影响,分析讨论了最具代表性的表面改性技术——氢化硅烷化的机理以及其对硅量子点性能的影响,提出了今后发展硅量子点表面改性技术的方向和应该注意的问题。
Silicon quantum dots have novel photovoltaic properties and are expected to play an important role in optoelectronics, photovoltaics and biomarkers. In order to make the silicon quantum dots show excellent and stable photoelectric properties, which can be effectively applied, it is usually necessary to modify the surface of the silicon quantum dots. In this paper, the recent progress in the surface modification of silicon quantum dots at home and abroad is introduced in detail, and the properties of silicon quantum dots dispersed and luminescent by surface modification technology are mainly introduced. The mechanism of hydrosilylation and its influence on the properties of silicon quantum dots are analyzed and discussed. The future development of silicon quantum dot surface modification technology and the problems to be noticed .