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研究了溅射 Ti/ Al/ Ti/ Au四层复合金属与 Al Ga N / Ga N的欧姆接触特性 ,并就环境温度对欧姆接触特性的影响进行了分析研究 .试验证实 :溅射的 Ti/ Al/ Ti/ Au与载流子浓度为 2 .2 4× 10 1 8cm- 3的 Al Ga N之间在室温下无需退火即可形成欧姆接触 .随快速退火温度的升高接触电阻降低 .快速退火时间 30 s已可实现该温度下最佳欧姆接触 .当工作温度不高于 30 0℃时接触电阻几乎不受温度的影响
The ohmic contact characteristics of the sputtered Ti / Al / Ti / Au four-layer composite metal with AlGa N / Ga N were studied and the influence of ambient temperature on the ohmic contact characteristics was analyzed.The results show that the sputtered Ti / An ohmic contact can be formed between Al / Ti / Au and Al Ga N with a carrier concentration of 2.4 × 10 18 cm -3 at room temperature without annealing. The contact resistance decreases with increasing annealing temperature. Annealing time of 30 s has been able to achieve the best ohmic contact at this temperature.When the operating temperature is not higher than 30 0 ℃, the contact resistance is almost unaffected by the temperature