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Ion photon emission microscopy(IPEM) is a new ion-induced emission microscopy. It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, prism, microscope tube and charge coupled device(CCD). A thin ZnS lilm doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS(Ag) film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the incident ions. Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidence.
It employs a broad ion beam with high energy and low fluence rate impinging on a sample. The position of a single ion is detected by an optical system with objective lens, Prism, microscope tube and charge coupled device (CCD). A thin ZnS lilm doped with Ag ions is used as a luminescent material. Generation efficiency and transmission efficiency of photons in the ZnS (Ag) film created by irradiated Cl ions are calculated. A single Cl ion optical microscopic image is observed by high quantum efficiency CCD. The resolution of a single Cl ion given in this IPEM system is 6 μm. Several factors influencing the resolution are discussed. A silicon diode is used to collect the electrical signals caused by the the Effective and accidental coincidence of optical images and electronic signals are illustrated. A two-dimensional map of single event effect is drawn out according to the data of effective coincidency ce.